Stacking-dependent shear modes in trilayer graphene
نویسندگان
چکیده
منابع مشابه
Stacking-dependent band gap and quantum transport in trilayer graphene
Graphene1–3 is an extraordinary two-dimensional (2D) system with chiral charge carriers and fascinating electronic, mechanical and thermal properties4,5. In multilayer graphene6,7, stacking order provides an important yet rarely explored degree of freedom for tuning its electronic properties8. For instance, Bernal-stacked trilayer graphene (B-TLG) is semi-metallic with a tunable band overlap, a...
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The crystal structure of a material plays an important role in determining its electronic properties. Changing from one crystal structure to another involves a phase transition that is usually controlled by a state variable such as temperature or pressure. In the case of trilayer graphene, there are two common stacking configurations (Bernal and rhombohedral) that exhibit very different electro...
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The Bernal (ABA)-stacked graphene trilayer is presumed to be thermodynamically more stable than the rhombohedral (ABC) counterpart. However, the thermal transformation from ABC to ABA domains does not occur at a temperature lower than 1,000 °C. Here we report that ABC-stacked trilayers are transformed to ABA-stacked layers after an organic molecule triazine is evaporated onto graphene surfaces ...
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The optical conductivities of graphene layers are strongly dependent on their stacking orders. Our first-principle calculations show that, while the optical conductivities of single-layer graphene (SLG) and bilayer graphene (BLG) with Bernal stacking are almost frequency-independent in the visible region, the optical conductivity of twisted bilayer graphene (TBG) is frequency-dependent, giving ...
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The stacking-dependent electronic structure and transport properties of bilayer graphene nanoribbons suspended between gold electrodes are investigated using density functional theory coupled with non-equilibrium Green’s functional method. We find substantially enhanced electron transmission as well as tunneling currents in the AA stacking of bilayer nanoribbons compared to either single-layer ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2015
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4906579